Solar high boron glass

What is a boron laser doping selective emitter (LDse)?

Boron laser doping selective emitter (LDSE) has attracted much attention in the current mass-production of n- type tunnel oxide passivated contact (TOPCon) crystalline silicon (c-Si) solar cells.

How to make a thinner BSG layer with high boron concentration?

Here, a thinner BSG layer with high boron concentration has been achieved by adjusting the boron diffusion conditions, which overcomes the insufficient diffusion dynamics caused by the low diffusion and segregation coeficients of boron atoms to improve the surface passivation and promote the laser doping.

Does boron increase surface concentration?

Another investigation in this paper addresses the impact of the surface near concentration of boron in the emitter. Ramping-down in nitrogen gas instead of an oxygen-containing ambient leads to a flat dopant profile in the first 200 nm in silicon and thus a more than factor 3 increased surface concentration.

Why does a boron emitter have a higher rsheet?

The limitation of the dopant dose in the profile leads to a higher Rsheet of the resulting profile. The newly developed homogeneous boron emitter features j0e = 14 fA cm −2 at a Rsheet = 161 Ω sq −1, a 62% decrease from the initial value, and an even lower j0e = 8 fA cm −2 is determined for an emitter with 330 Ω sq −1.